Chin. J. Semicond. > 1990, Volume 11 > Issue 8 > 642-646

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中性空位引起的本征扩散对硅中注入砷离子在退火过程中再分布的影响

汤庭鳌 , 郑大卫 and C.A.Paz de Araujo

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    Received: 19 August 2015 Revised: Online: Published: 01 August 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(8): 642-646
      汤庭鳌, 郑大卫, C.A.Paz de Araujo. 中性空位引起的本征扩散对硅中注入砷离子在退火过程中再分布的影响[J]. 半导体学报(英文版), 1990, 11(8): 642-646.
      Citation:
      汤庭鳌, 郑大卫, C.A.Paz de Araujo. 中性空位引起的本征扩散对硅中注入砷离子在退火过程中再分布的影响[J]. 半导体学报(英文版), 1990, 11(8): 642-646.
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      • Received Date: 2015-08-19

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