Chin. J. Semicond. > 2003, Volume 24 > Issue 5 > 449-453

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用氧化多孔硅作牺牲层制备硅基电容式微传声器(英文)

宁瑾 , 刘忠立 , 刘焕章 and 葛永才

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Key words: 硅基电容式微传声器, 氧化多孔硅, 牺牲层

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    Received: 20 August 2015 Revised: Online: Published: 01 May 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(5): 449-453
      宁瑾, 刘忠立, 刘焕章, 葛永才. 用氧化多孔硅作牺牲层制备硅基电容式微传声器(英文)[J]. 半导体学报(英文版), 2003, 24(5): 449-453.
      Citation:
      宁瑾, 刘忠立, 刘焕章, 葛永才. 用氧化多孔硅作牺牲层制备硅基电容式微传声器(英文)[J]. 半导体学报(英文版), 2003, 24(5): 449-453.
      shu

      • Received Date: 2015-08-20

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