Chin. J. Semicond. > 1991, Volume 12 > Issue 11 > 666-672
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硅线性升温快速热处理氧化动力学模型

汤庭鳌 and C.A.Paz de Araujo

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(11): 666-672
      汤庭鳌, C.A.Paz de Araujo. 硅线性升温快速热处理氧化动力学模型[J]. 半导体学报(英文版), 1991, 12(11): 666-672.
      Citation:
      汤庭鳌, C.A.Paz de Araujo. 硅线性升温快速热处理氧化动力学模型[J]. 半导体学报(英文版), 1991, 12(11): 666-672.
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      • Received Date: 2015-08-19

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