Chin. J. Semicond. > 2002, Volume 23 > Issue 1 > 61-64
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通过直接栅电流测量研究PMOSFET's热载流子损伤

张进城 , 郝跃 and 刘海波

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Key words: 直接栅电流测量, 热载流子损伤

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(1): 61-64
      张进城, 郝跃, 刘海波. 通过直接栅电流测量研究PMOSFET's热载流子损伤[J]. 半导体学报(英文版), 2002, 23(1): 61-64.
      Citation:
      张进城, 郝跃, 刘海波. 通过直接栅电流测量研究PMOSFET's热载流子损伤[J]. 半导体学报(英文版), 2002, 23(1): 61-64.
      shu

      • Received Date: 2015-08-19

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