Room-Temperature Operated and Fully Gate-Bias Controlled Memory Devices Based on Self-Assembled InAs/GaAs Quantum Dots

Du Jun; Wang Qingpu; Balocco C; Song A M

Chin. J. Semicond. > 2006, Volume 27 > Issue 2 > 363-367

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Room-Temperature Operated and Fully Gate-Bias Controlled Memory Devices Based on Self-Assembled InAs/GaAs Quantum Dots

Du Jun, Wang Qingpu, Balocco C and Song A M

+ Author Affiliations

Abstract: Memory devices fabricated in high-electron-mobility transistors with embedded InAs quantum dots (QDs) can be fully controlled by gate bias at room temperature.The memory effect is due to the deep levels induced by the QD layer,and rather than the charging and discharging of intrinsic energy levels in QDs,which is demonstrated by the hysteresis,real-time and bias-cooling C-V measurements

Key words: InAs/GaAs self-assembled quantum dots, memory device, bias-cooling, deep levels

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Received: 20 August 2015 Revised: Online: Published: 01 February 2006

Memory devices fabricated in high-electron-mobility transistors with embedded InAs quantum dots (QDs) can be fully controlled by gate bias at room temperature.The memory effect is due to the deep levels induced by the QD layer,and rather than the charging and discharging of intrinsic energy levels in QDs,which is demonstrated by the hysteresis,real-time and bias-cooling C-V measurements

Room-Temperature Operated and Fully Gate-Bias Controlled Memory Devices Based on Self-Assembled InAs/GaAs Quantum Dots

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