Chin. J. Semicond. > 2005, Volume 26 > Issue 7 > 1464-1468
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运算放大器不同剂量率的辐射损伤效应

陆妩 , 任迪远 , 郭旗 , 余学峰 and 艾尔肯

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Key words: 运算放大器, 60 Coγ辐照, 退火, 剂量率效应

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    Received: 18 August 2015 Revised: Online: Published: 01 July 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(7): 1464-1468
      陆妩, 任迪远, 郭旗, 余学峰, 艾尔肯. 运算放大器不同剂量率的辐射损伤效应[J]. 半导体学报(英文版), 2005, 26(7): 1464-1468.
      Citation:
      陆妩, 任迪远, 郭旗, 余学峰, 艾尔肯. 运算放大器不同剂量率的辐射损伤效应[J]. 半导体学报(英文版), 2005, 26(7): 1464-1468.
      shu

      • Received Date: 2015-08-18

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