Chin. J. Semicond. > 2007, Volume 28 > Issue 2 > 196-199

PAPERS

Luminescence and Recombination Centers in ZnO/Si Films

Liu Cihui, Yao Ran, Su Jianfeng, Ma Zeyu and Fu Zhuxi

+ Author Affiliations

PDF

Abstract: D0h luminescence of ZnO films deposited on p-type Si substrates grown by MOCVD is reported.After annealing in air at 700℃ for 1h,the photoluminescence (PL) spectra,the I-V characteristics,and the deep level transient spectroscopy (DLTS) of the samples are measured.All the samples we measured have the rectification characteristic.The DLTS signals show two deep levels of E1 and E2.The Gauss fit curves of the PL spectra at room temperature show three luminescence lines,one of which is attributed to the excitation emission.The donor level E1 measured by DLTS and the other two emission lines,which are very close to each other,have a close relation with the location state donor ionization energy Ed,and are thought to be from neutral donors bound to hole emission (D0h).Moreover,the intensity of the PL spectra decreases while the relative density of E2 increases,showing that E2 has the properties of a nonradiative center.

Key words: MOCVDZnO/p-Siheterojunctiondefect

1

Interfacial passivation of n-ZnO/p-Si heterojunction by CuI thin layer

Chao Xiong, Jin Xiao, Lei Chen, Wenhan Du, Weilong Xu, et al.

Journal of Semiconductors, 2018, 39(12): 124013. doi: 10.1088/1674-4926/39/12/124013

2

Modified textured surface MOCVD-ZnO:B transparent conductive layers for thin-film solar cells

Xinliang Chen, Congbo Yan, Xinhua Geng, Dekun Zhang, Changchun Wei, et al.

Journal of Semiconductors, 2014, 35(4): 043002. doi: 10.1088/1674-4926/35/4/043002

3

Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD

Tao Zhikuo, Zhang Rong, Xiu Xiangqian, Cui Xugao, Li Li, et al.

Journal of Semiconductors, 2012, 33(7): 073002. doi: 10.1088/1674-4926/33/7/073002

4

High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system

Yin Haibo, Wang Xiaoliang, Ran Junxue, Hu Guoxin, Zhang Lu, et al.

Journal of Semiconductors, 2011, 32(3): 033002. doi: 10.1088/1674-4926/32/3/033002

5

Finite element analysis of the temperature field in a vertical MOCVD reactor by induction heating

Li Zhiming, Xu Shengrui, Zhang Jincheng, Chang Yongming, Ni Jingyu, et al.

Journal of Semiconductors, 2009, 30(11): 113004. doi: 10.1088/1674-4926/30/11/113004

6

MgZnO/ZnO p-n Heterojunctions Fabricated by MOCVD

Dong Xin, Zhao Wang, Zhang Yuantao, Zhang Baolin, Li Xiangping, et al.

Journal of Semiconductors, 2008, 29(7): 1338-1341.

7

Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

Zhang Xiaomin, Wang Yanjie, Yang Ziwen, Liao Hui, Chen Weihua, et al.

Journal of Semiconductors, 2008, 29(8): 1475-1478.

8

Growth of High-Quality InP-on-GaAs Quasi-Substrates Using Double Low-Temperature Buffers and Strained Layer Surperlattices by MOCVD

Zhou Jing, Ren Xiaomin, Huang Yongqing, Wang Qi

Journal of Semiconductors, 2008, 29(10): 1855-1859.

9

Influence of Wall Properties on Wall Temperature of a Radial Flow MOCVD Reactor with Three Separate Vertical Inlets

Liu Yong, Nie Yuhong, Yao Shouguang

Chinese Journal of Semiconductors , 2007, 28(6): 913-917.

10

Epitaxial Growth of Atomically Flat AlN Layers on Sapphire Substrate by Metal Organic Chemical Vapor Deposition

Zhao Hong, Zou Zeya, Zhao Wenbai, Liu Ting, Yang Xiaobo, et al.

Chinese Journal of Semiconductors , 2007, 28(10): 1568-1573.

11

Growth of High AI Content AIGaN Epilayer by MOCVD

Wang Xiaoyan, Wang Xiaoliang, Hu Guoxin, Wang Baozhu, Li Jianping, et al.

Chinese Journal of Semiconductors , 2007, 28(S1): 193-196.

12

Heteroepitaxy of InP/GaAs by MOCVD

Zhou Jing, Wang Qi, Xiong Deping, Cai Shiwei, Huang Hui, et al.

Chinese Journal of Semiconductors , 2007, 28(S1): 190-192.

13

Growth and Characterization of m Plane GaN Material by MOCVD

Xie Zili, Zhang Rong, Han Ping, Liu Chengxiang, Xiu XiangQian, et al.

Chinese Journal of Semiconductors , 2007, 28(S1): 249-252.

14

Simulation of the ZnO-MOCVD Horizontal Reactor Geometry

Liu Songmin, Gu Shulin, Zhu Shunming, Ye Jiandong, Liu Wei, et al.

Chinese Journal of Semiconductors , 2007, 28(S1): 309-311.

15

Wall Temperature Simulation of a Radial Flow MOCVD Reactor with Three-Separate Vertical Inlets

Nie Yuhong, Liu Yong, Yao Shouguang

Chinese Journal of Semiconductors , 2007, 28(1): 127-130.

16

Numerical Simulation of Gas Phase and Surface Reaction for Growth of GaN by MOCVD

Gao Lihua, Yang Yunke, Chen Haixin, Fu Song

Chinese Journal of Semiconductors , 2007, 28(S1): 245-248.

17

MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC

Wang Xiaoliang, Hu Guoxin, Ma Zhiyong, Xiao Hongling, Wang Cuimei, et al.

Chinese Journal of Semiconductors , 2006, 27(9): 1521-1525.

18

Growth of Space Ordered 1.3μm InAs Quantum Dots on GaAs(100) Vicinal Substrates by MOCVD

Liang Song, Zhu Hongliang, Pan Jiaoqing, Wang Wei

Chinese Journal of Semiconductors , 2005, 26(11): 2074-2079.

19

ZnO Thin Film Growth by Metal Organic Chemical Vapor Deposition and Its Back Contact Application in Solar Cells

Chen Xinliang, Xu Buheng, Xue Junming, Zhao Ying, Zhang Xiaodan, et al.

Chinese Journal of Semiconductors , 2005, 26(12): 2363-2368.

20

High Resistivity GaN Film Grown by MOCVD

Fang Cebao, Wang Xiaoliang, Liu Chao, Hu Guoxin, Wang Junxi, et al.

Chinese Journal of Semiconductors , 2005, 26(S1): 91-93.

  • Search

    Advanced Search >>

    GET CITATION

    Liu Cihui, Yao Ran, Su Jianfeng, Ma Zeyu, Fu Zhuxi. Luminescence and Recombination Centers in ZnO/Si Films[J]. Journal of Semiconductors, 2007, 28(2): 196-199.
    Liu C H, Yao R, Su J F, Ma Z Y, Fu Z X. Luminescence and Recombination Centers in ZnO/Si Films[J]. Chin. J. Semicond., 2007, 28(2): 196.
    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2983 Times PDF downloads: 2262 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 26 September 2006 Online: Published: 01 February 2007

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Liu Cihui, Yao Ran, Su Jianfeng, Ma Zeyu, Fu Zhuxi. Luminescence and Recombination Centers in ZnO/Si Films[J]. Journal of Semiconductors, 2007, 28(2): 196-199. ****Liu C H, Yao R, Su J F, Ma Z Y, Fu Z X. Luminescence and Recombination Centers in ZnO/Si Films[J]. Chin. J. Semicond., 2007, 28(2): 196.
      Citation:
      Liu Cihui, Yao Ran, Su Jianfeng, Ma Zeyu, Fu Zhuxi. Luminescence and Recombination Centers in ZnO/Si Films[J]. Journal of Semiconductors, 2007, 28(2): 196-199. ****
      Liu C H, Yao R, Su J F, Ma Z Y, Fu Z X. Luminescence and Recombination Centers in ZnO/Si Films[J]. Chin. J. Semicond., 2007, 28(2): 196.

      Luminescence and Recombination Centers in ZnO/Si Films

      • Received Date: 2015-08-18
      • Accepted Date: 2006-06-08
      • Revised Date: 2006-09-26
      • Published Date: 2007-01-30

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return