Chin. J. Semicond. > 1997, Volume 18 > Issue 12 > 921-925
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高选择和自终止多孔氧化硅SOI技术研究

黄宜平 , 李爱珍 , 邹斯洵 , 李金华 and 竺士炀

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    Received: 19 August 2015 Revised: Online: Published: 01 December 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(12): 921-925
      黄宜平, 李爱珍, 邹斯洵, 李金华, 竺士炀. 高选择和自终止多孔氧化硅SOI技术研究[J]. 半导体学报(英文版), 1997, 18(12): 921-925.
      Citation:
      黄宜平, 李爱珍, 邹斯洵, 李金华, 竺士炀. 高选择和自终止多孔氧化硅SOI技术研究[J]. 半导体学报(英文版), 1997, 18(12): 921-925.
      shu

      • Received Date: 2015-08-19

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