| Citation: |
Tang Junxiong, Tang Minghua, Yang Feng, Zhang Junjie, Zhou Yichun, Zheng Xuejun. Effect of an Asymmetric Doping Channel on Partially Depleted SOI MOSFETs[J]. Journal of Semiconductors, 2008, 29(6): 1070-1074.
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Tang J X, Tang M H, Yang F, Zhang J J, Zhou Y C, Zheng X J. Effect of an Asymmetric Doping Channel on Partially Depleted SOI MOSFETs[J]. J. Semicond., 2008, 29(6): 1070.
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Effect of an Asymmetric Doping Channel on Partially Depleted SOI MOSFETs
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Abstract
Asymmetric doping channel (AC) partially depleted (PD) silicon-on-insulator (SOI) devices are simulated using two-dimensional simulation software.The electrical characteristics such as the output characteristics and the breakdown voltage are studied in detail.Through simulations,it is found that the AC PD SOI device can suppress the floating effects and improve the breakdown characteristics over conventional partially depleted silicon-on-insulator devices.Also compared to the reported AC FD SOI device,the performance variation with device parameters is more predictable and operable in industrial applications.The AC FD SOI device has thinner silicon film,which causes parasitical effects such as coupling effects between the front gate and the back gate and hot electron degradation effects.-
Keywords:
- AC PD SOI MOSFETs,
- output characteristics,
- breakdown voltage
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References
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Proportional views
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