Chin. J. Semicond. > 1983, Volume 4 > Issue 6 > 601-605
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离子注入氮化硅隔离的CMOS器件

刘忠立 , 伏·车慈曼 , 依·罗伯特 and 格·启姆

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    Received: 20 August 2015 Revised: Online: Published: 01 June 1983

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      Article Navigation >  Journal of Semiconductors  > 1983  >  4(6): 601-605
      刘忠立, 伏·车慈曼, 依·罗伯特, 格·启姆. 离子注入氮化硅隔离的CMOS器件[J]. 半导体学报(英文版), 1983, 4(6): 601-605.
      Citation:
      刘忠立, 伏·车慈曼, 依·罗伯特, 格·启姆. 离子注入氮化硅隔离的CMOS器件[J]. 半导体学报(英文版), 1983, 4(6): 601-605.
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      • Received Date: 2015-08-20

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