Chin. J. Semicond. > 2002, Volume 23 > Issue 3 > 315-318
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硅片缺陷粒径分布参数的提取方法

郝跃 , 陆勇 , 赵天绪 and 马佩军

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Key words: 缺陷, 故障, 粒径分布, 成品率

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(3): 315-318
      郝跃, 陆勇, 赵天绪, 马佩军. 硅片缺陷粒径分布参数的提取方法[J]. 半导体学报(英文版), 2002, 23(3): 315-318.
      Citation:
      郝跃, 陆勇, 赵天绪, 马佩军. 硅片缺陷粒径分布参数的提取方法[J]. 半导体学报(英文版), 2002, 23(3): 315-318.
      shu

      • Received Date: 2015-08-19

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