Chin. J. Semicond. > 1992, Volume 13 > Issue 9 > 584-587

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Ga_(1-x)In_xSb/GaSb应变层超晶格的MOVPE生长

陆大成 , 汪度 , 刘祥林 , 万寿科 and 王玉田

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    Received: 19 August 2015 Revised: Online: Published: 01 September 1992

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      Article Navigation >  Journal of Semiconductors  > 1992  >  13(9): 584-587
      陆大成, 汪度, 刘祥林, 万寿科, 王玉田. Ga_(1-x)In_xSb/GaSb应变层超晶格的MOVPE生长[J]. 半导体学报(英文版), 1992, 13(9): 584-587.
      Citation:
      陆大成, 汪度, 刘祥林, 万寿科, 王玉田. Ga_(1-x)In_xSb/GaSb应变层超晶格的MOVPE生长[J]. 半导体学报(英文版), 1992, 13(9): 584-587.
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      • Received Date: 2015-08-19

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