Chin. J. Semicond. > 2006, Volume 27 > Issue 9 > 1537-1542

LETTERS

First-Principle Calculation of the Electronic Structure of Sb-Doped SrTiO3

Yun Jiangni, Zhang Zhiyong, Deng Zhouhu and Zhang Fuchun

+ Author Affiliations

PDF

Abstract: The electronic structure,including band structure,density of states (DOS),and partial density of states of SrTi1-xSbxO.3 with x=0,0.125,0.25,and 0.33 is calculated from the first principles of plane wave ultra-soft pseudo-potential technology based on density function theory.The calculated results reveal that due to the electron doping,the Fermi level moves into the conduction bands for SrTi1-xSbxO.3 with x=0.125 and the system shows metallic behavior.In addition,the DOS moves towards low energy and the optical band gap is broadened.The wide band gap and the low density of the states in the conduction band result in the transparency of the films.

Key words: first principlesSrTiO3Sb-dopingelectronic structuretransparent films

1

First principles study of the electronic structure and photovoltaic properties of β-CuGaO2 with MBJ + U approach

Guoping Luo, Yingmei Bian, Ruifeng Wu, Guoxia Lai, Xiangfu Xu, et al.

Journal of Semiconductors, 2020, 41(10): 102102. doi: 10.1088/1674-4926/41/10/102102

2

Oxide-based thin film transistors for flexible electronics

Yongli He, Xiangyu Wang, Ya Gao, Yahui Hou, Qing Wan, et al.

Journal of Semiconductors, 2018, 39(1): 011005. doi: 10.1088/1674-4926/39/1/011005

3

ZnO1-xTex and ZnO1-xSx semiconductor alloys as competent materials for opto-electronic and solar cell applications:a comparative analysis

Utsa Das, Partha P. Pal

Journal of Semiconductors, 2017, 38(8): 082001. doi: 10.1088/1674-4926/38/8/082001

4

The electronic and magnetic properties of wurtzite Mn:CdS, Cr:CdS and Mn:Cr:CdS: first principles calculations

Azeem Nabi, Zarmeena Akhtar, Tahir Iqbal, Atif Ali, Arshad Javid, et al.

Journal of Semiconductors, 2017, 38(7): 073001. doi: 10.1088/1674-4926/38/7/073001

5

Effect of relaxation on the energetics and electronic structure of clean Ag3PO4(111) surface

Xinguo Ma, Jie Yan, Na Liu, Lin Zhu, Bei Wang, et al.

Journal of Semiconductors, 2016, 37(3): 033001. doi: 10.1088/1674-4926/37/3/033001

6

Electronic structure and optical properties of F-doped β-Ga2O3 from first principles calculations

Jinliang Yan, Chong Qu

Journal of Semiconductors, 2016, 37(4): 042002. doi: 10.1088/1674-4926/37/4/042002

7

Thermo-electronic solar power conversion with a parabolic concentrator

Olawole C. Olukunle, Dilip K. De

Journal of Semiconductors, 2016, 37(2): 024002. doi: 10.1088/1674-4926/37/2/024002

8

Electronic structures and optical properties of Nb-doped SrTiO3 from first principles

Shujuan Jiao, Jinliang Yan, Guipeng Sun, Yinnü Zhao

Journal of Semiconductors, 2016, 37(7): 072001. doi: 10.1088/1674-4926/37/7/072001

9

Packaging investigation of optoelectronic devices

Zhike Zhang, Yu Liu, Jianguo Liu, Ninghua Zhu

Journal of Semiconductors, 2015, 36(10): 101001. doi: 10.1088/1674-4926/36/10/101001

10

Effect of N and Fe codoping on the electronic structure and optical properties of TiO2 from first-principles study

Zhuomao Zhu, Baoan Bian, Haifeng Shi

Journal of Semiconductors, 2015, 36(10): 102003. doi: 10.1088/1674-4926/36/10/102003

11

In situ TEM/SEM electronic/mechanical characterization of nano material with MEMS chip

Yuelin Wang, Tie Li, Xiao Zhang, Hongjiang Zeng, Qinhua Jin, et al.

Journal of Semiconductors, 2014, 35(8): 081001. doi: 10.1088/1674-4926/35/8/081001

12

Structural parameters improvement of an integrated HBT in a cascode configuration opto-electronic mixer

Hassan Kaatuzian, Hadi Dehghan Nayeri, Masoud Ataei, Ashkan Zandi

Journal of Semiconductors, 2013, 34(9): 094001. doi: 10.1088/1674-4926/34/9/094001

13

AC-electronic and dielectric properties of semiconducting phthalocyanine compounds:a comparative study

Safa'a M. Hraibat, Rushdi M-L. Kitaneh, Mohammad M. Abu-Samreh, Abdelkarim M. Saleh

Journal of Semiconductors, 2013, 34(11): 112001. doi: 10.1088/1674-4926/34/11/112001

14

First-principles study of the electronic structures and optical properties of C–F–Be doped wurtzite ZnO

Zuo Chunying, Wen Jing, Zhong Cheng

Journal of Semiconductors, 2012, 33(7): 072001. doi: 10.1088/1674-4926/33/7/072001

15

Structural and optoelectronic properties of sprayed Sb:SnO2 thin films: Effects of substrate temperature and nozzle-to-substrate distance

A. R. Babar, S. S. Shinde, A. V. Moholkar, C. H. Bhosale, K. Y. Rajpure, et al.

Journal of Semiconductors, 2011, 32(10): 102001. doi: 10.1088/1674-4926/32/10/102001

16

Photoconductive properties of lead iodide films prepared by electron beam evaporation

Zhu Xinghua, Yang Dingyu, Wei Zhaorong, Sun Hui, Wang Zhiguo, et al.

Journal of Semiconductors, 2010, 31(8): 083002. doi: 10.1088/1674-4926/31/8/083002

17

First principles study of the Be–C co-doped MgB2 system

Su Xiyu, Zhi Xiaofen, Hou Qinying, Cheng Wei, Liu Jiaxue, et al.

Journal of Semiconductors, 2009, 30(11): 112001. doi: 10.1088/1674-4926/30/11/112001

18

Influence of Be-Doping on Electronic Structure and Optical Properties of ZnO

Zheng Yongping, Chen Zhigao, Lu Yu, Wu Qingyun, Weng Zhenzhen, et al.

Journal of Semiconductors, 2008, 29(12): 2316-2321.

19

First-Principles Calculation of ZnO Doped with Ag

Wan Qixin, Xiong Zhihua, Rao Jianping, Dai Jiangnan, Le Shuping, et al.

Chinese Journal of Semiconductors , 2007, 28(5): 696-700.

20

Electronic Structure of Semiconductor Nanocrystals

Li Jingbo, Wang Linwang, Wei Suhuai

Chinese Journal of Semiconductors , 2006, 27(2): 191-196.

  • Search

    Advanced Search >>

    GET CITATION

    Yun Jiangni, Zhang Zhiyong, Deng Zhouhu, Zhang Fuchun. First-Principle Calculation of the Electronic Structure of Sb-Doped SrTiO3[J]. Journal of Semiconductors, 2006, 27(9): 1537-1542.
    Yun J N, Zhang Z Y, Deng Z H, Zhang F C. First-Principle Calculation of the Electronic Structure of Sb-Doped SrTiO3[J]. Chin. J. Semicond., 2006, 27(9): 1537.
    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3373 Times PDF downloads: 2370 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 15 May 2006 Online: Published: 01 September 2006

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Yun Jiangni, Zhang Zhiyong, Deng Zhouhu, Zhang Fuchun. First-Principle Calculation of the Electronic Structure of Sb-Doped SrTiO3[J]. Journal of Semiconductors, 2006, 27(9): 1537-1542. ****Yun J N, Zhang Z Y, Deng Z H, Zhang F C. First-Principle Calculation of the Electronic Structure of Sb-Doped SrTiO3[J]. Chin. J. Semicond., 2006, 27(9): 1537.
      Citation:
      Yun Jiangni, Zhang Zhiyong, Deng Zhouhu, Zhang Fuchun. First-Principle Calculation of the Electronic Structure of Sb-Doped SrTiO3[J]. Journal of Semiconductors, 2006, 27(9): 1537-1542. ****
      Yun J N, Zhang Z Y, Deng Z H, Zhang F C. First-Principle Calculation of the Electronic Structure of Sb-Doped SrTiO3[J]. Chin. J. Semicond., 2006, 27(9): 1537.

      First-Principle Calculation of the Electronic Structure of Sb-Doped SrTiO3

      • Received Date: 2015-08-18
      • Accepted Date: 2006-02-13
      • Revised Date: 2006-05-15
      • Published Date: 2006-10-12

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return