Chin. J. Semicond. > 2003, Volume 24 > Issue 10 > 1072-1077
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50nm SOI-DTMOS器件的性能

陈国良 and 黄如

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Key words: 50nm, SOIDTMOS器件, 模拟

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    Received: 20 August 2015 Revised: Online: Published: 01 October 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(10): 1072-1077
      陈国良, 黄如. 50nm SOI-DTMOS器件的性能[J]. 半导体学报(英文版), 2003, 24(10): 1072-1077.
      Citation:
      陈国良, 黄如. 50nm SOI-DTMOS器件的性能[J]. 半导体学报(英文版), 2003, 24(10): 1072-1077.
      shu

      • Received Date: 2015-08-20

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