| Citation: |
Miao Qinghai, Lu Shuojin, Zhang Xinghua, Zong Fujian, Zhu Yangjun. The Convergence Characteristic of the Forward I-V Characteristic Curves of a Semiconductor Silicon Barrier at Different Temperatures[J]. Journal of Semiconductors, 2008, 29(4): 663-667.
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Miao Q H, Lu S J, Zhang X H, Zong F J, Zhu Y J. The Convergence Characteristic of the Forward I-V Characteristic Curves of a Semiconductor Silicon Barrier at Different Temperatures[J]. J. Semicond., 2008, 29(4): 663.
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The Convergence Characteristic of the Forward I-V Characteristic Curves of a Semiconductor Silicon Barrier at Different Temperatures
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Abstract
The I-V-(T) characteristic curves of p-n junctions with the forward voltage as the independent variable,the logarithm of forward current as the dependent variable,and the junction temperature as the parameter,almost converge at one point in the first quadrant.The voltage corresponding with the convergence point nearly equals the bandgap of the semiconductor material.This convergence point can be used to obtain the I-V characteristic curve at any temperature. -
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