| Citation: |
Ma Zhifang, Wang Yutian, Jiang Desheng, Zhao Degang, Zhang Shuming, Zhu Jianjun, Liu Zongshun, Sun Baojuan, Duan Ruifei, Yang Hui, Liang Junwu. Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD[J]. Journal of Semiconductors, 2008, 29(7): 1242-1245.
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Ma Z F, Wang Y T, Jiang D S, Zhao D G, Zhang S M, Zhu J J, Liu Z S, Sun B J, Duan R F, Yang H, Liang J W. Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD[J]. J. Semicond., 2008, 29(7): 1242.
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Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD
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Abstract
High-resolution X-ray diffraction has been employed to investigate the diffuse scattering in a (0001) oriented GaN epitaxial film grown on sapphire substrate.The analysis reveals that defect clusters are present in GaN films and their concentration increases as the density of threading dislocations increases.Meanwhile,the mean radius of these defect clusters shows a reverse tendency.This result is explained by the effect of clusters preferentially forming around dislocations,which act as effective sinks for the segregation of point defects.The electric mobility is found to decrease as the cluster concentration increases.-
Keywords:
- X-ray diffuse scattering,
- GaN,
- defect cluster
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References
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Proportional views
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