Chin. J. Semicond. > 1998, Volume 19 > Issue 1 > 16-20
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半导体InP的高能重离子辐照效应研究

胡新文 , 王少阶 , 陈志权 , 李世清 and 侯民东

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(1): 16-20
      胡新文, 王少阶, 陈志权, 李世清, 侯民东. 半导体InP的高能重离子辐照效应研究[J]. 半导体学报(英文版), 1998, 19(1): 16-20.
      Citation:
      胡新文, 王少阶, 陈志权, 李世清, 侯民东. 半导体InP的高能重离子辐照效应研究[J]. 半导体学报(英文版), 1998, 19(1): 16-20.
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      • Received Date: 2015-08-20

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