Chin. J. Semicond. > 2002, Volume 23 > Issue 3 > 251-256
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VDMOS场效应晶体管电路模型的构造及参数提取(英文)

赖柯吉 , 张莉 and 田立林

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Key words: 垂直双扩散MOS管, 参数提取, 子电路模型, JFET效应

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(3): 251-256
      赖柯吉, 张莉, 田立林. VDMOS场效应晶体管电路模型的构造及参数提取(英文)[J]. 半导体学报(英文版), 2002, 23(3): 251-256.
      Citation:
      赖柯吉, 张莉, 田立林. VDMOS场效应晶体管电路模型的构造及参数提取(英文)[J]. 半导体学报(英文版), 2002, 23(3): 251-256.
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      • Received Date: 2015-08-19

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