Chin. J. Semicond. > 1995, Volume 16 > Issue 4 > 272-275
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阶梯衬底内条形附加吸收区结构超辐射发光二极管

邢进，刘素平，姜秀英，赵方海，曲轶，杜国同

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(4): 272-275
      邢进，刘素平，姜秀英，赵方海，曲轶，杜国同. 阶梯衬底内条形附加吸收区结构超辐射发光二极管[J]. 半导体学报(英文版), 1995, 16(4): 272-275.
      Citation:
      邢进，刘素平，姜秀英，赵方海，曲轶，杜国同. 阶梯衬底内条形附加吸收区结构超辐射发光二极管[J]. 半导体学报(英文版), 1995, 16(4): 272-275.
      shu

      • Received Date: 2015-08-19

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