Chin. J. Semicond. > 2003, Volume 24 > Issue 1 > 6-10

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Key words: In1-x-yGayAlxAs, 量子阱激光器, DFB, 微分增益, 优化设计

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    Received: 20 August 2015 Revised: Online: Published: 01 January 2003

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      张冶金, 朱林, 高志国, 陈明华, 董毅, 陈维友, 刘式墉, 谢世钟. 应变多量子阱DFB激光器有源区的优化设计(英文)[J]. 半导体学报(英文版), 2003, 24(1): 6-10.
      Citation:
      张冶金, 朱林, 高志国, 陈明华, 董毅, 陈维友, 刘式墉, 谢世钟. 应变多量子阱DFB激光器有源区的优化设计(英文)[J]. 半导体学报(英文版), 2003, 24(1): 6-10.

      • Received Date: 2015-08-20

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