| Citation: |
Chi Yusong, Huang Fengyi, Wu Zhongjie, Zhang Shaoyong, Kong Xiaoming, Wang Zhigong. Characterization and Modeling for 0.13μm RF MOSFETs[J]. Journal of Semiconductors, 2006, 27(2): 373-376.
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Chi Y S, Huang F Y, Wu Z J, Zhang S Y, Kong X M, Wang Z G. Characterization and Modeling for 0.13μm RF MOSFETs[J]. Chin. J. Semicond., 2006, 27(2): 373.
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Characterization and Modeling for 0.13μm RF MOSFETs
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Abstract
RF nMOS transistors with optimized layouts are successfully fabricated in a 0.13μm CMOS RF/MS technology.DC characteristic and S-parameter measurements are performed.The measured results show that the cut-off frequency and the maximum oscillation frequency of the RF nMOS reach beyond 93 and 90GHz,respectively.Small-signal modeling is carried out for these RF MOSFETs using a small-signal equivalent circuit model.The simulation results fit well with the measurement results in frequency range from 100MHz to 30GHz.-
Keywords:
- CMOS,
- RF,
- small signal model,
- parameter extraction
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References
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Proportional views
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