Chin. J. Semicond. > 1990, Volume 11 > Issue 11 > 844-848
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两步退火对SIMOX结构形成的影响

陈南翔 , 王忠烈 and 黄敞

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(11): 844-848
      陈南翔, 王忠烈, 黄敞. 两步退火对SIMOX结构形成的影响[J]. 半导体学报(英文版), 1990, 11(11): 844-848.
      Citation:
      陈南翔, 王忠烈, 黄敞. 两步退火对SIMOX结构形成的影响[J]. 半导体学报(英文版), 1990, 11(11): 844-848.
      shu

      • Received Date: 2015-08-19

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