Chin. J. Semicond. > 1992, Volume 13 > Issue 5 > 322-326

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用静压光致发光研究GaAs/AlAs超短周期超晶格导带最低能级的特性

李国华 , 刘振先 , 韩和相 , 汪兆平 , 江德生 and Klaus. Ploog

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    Received: 19 August 2015 Revised: Online: Published: 01 May 1992

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      Article Navigation >  Journal of Semiconductors  > 1992  >  13(5): 322-326
      李国华, 刘振先, 韩和相, 汪兆平, 江德生, Klaus. Ploog. 用静压光致发光研究GaAs/AlAs超短周期超晶格导带最低能级的特性[J]. 半导体学报(英文版), 1992, 13(5): 322-326.
      Citation:
      李国华, 刘振先, 韩和相, 汪兆平, 江德生, Klaus. Ploog. 用静压光致发光研究GaAs/AlAs超短周期超晶格导带最低能级的特性[J]. 半导体学报(英文版), 1992, 13(5): 322-326.
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      • Received Date: 2015-08-19

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