Chin. J. Semicond. > 1995, Volume 16 > Issue 5 > 344-349
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In_（0．6）Ga_（0．4）As／InP应变量子阱的光致发光

高瑛，刘学彦，赵家龙，苏锡安，秦福文，杨树人，刘宝林，陈佰军，刘式墉

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    Received: 19 August 2015 Revised: Online: Published: 01 May 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(5): 344-349
      高瑛，刘学彦，赵家龙，苏锡安，秦福文，杨树人，刘宝林，陈佰军，刘式墉. In_（0．6）Ga_（0．4）As／InP应变量子阱的光致发光[J]. 半导体学报(英文版), 1995, 16(5): 344-349.
      Citation:
      高瑛，刘学彦，赵家龙，苏锡安，秦福文，杨树人，刘宝林，陈佰军，刘式墉. In_（0．6）Ga_（0．4）As／InP应变量子阱的光致发光[J]. 半导体学报(英文版), 1995, 16(5): 344-349.
      shu

      • Received Date: 2015-08-19

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