Chin. J. Semicond. > 2005, Volume 26 > Issue S1 > 281-284

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Kinetics of Growth of AlAs/AlGaAs Oxide in Cylindrical Mesa

Dong Limin, Guo Xia, Qu Hongwei, Deng Jun, Du Jinyu, Zou Deshu and Shen Guangdi

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Abstract: Wet oxidation of AlAs/AlGaAs is an important step in the process of the oxide-confined VCSELs.The kinetics of Al0.98Ga0.02As wet oxidation process are investigated in cylindrically symmetric mesa structure.We compare and analyze the rule relation between the stripe,convex,and concave mesa,and obtain a novel model which suits 2D cylindrical structure.The simulated data using the novel formulation is in close agreement with the experiment data.

Key words: VCSELAlGaAswet oxidation

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2005

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      Dong Limin, Guo Xia, Qu Hongwei, Deng Jun, Du Jinyu, Zou Deshu, Shen Guangdi. Kinetics of Growth of AlAs/AlGaAs Oxide in Cylindrical Mesa[J]. Journal of Semiconductors, 2005, 26(S1): 281-284. ****Dong L M, Guo X, Qu H W, Deng J, Du J Y, Zou D S, Shen G D. Kinetics of Growth of AlAs/AlGaAs Oxide in Cylindrical Mesa[J]. Chin. J. Semicond., 2005, 26(13): 281.
      Citation:
      Dong Limin, Guo Xia, Qu Hongwei, Deng Jun, Du Jinyu, Zou Deshu, Shen Guangdi. Kinetics of Growth of AlAs/AlGaAs Oxide in Cylindrical Mesa[J]. Journal of Semiconductors, 2005, 26(S1): 281-284. ****
      Dong L M, Guo X, Qu H W, Deng J, Du J Y, Zou D S, Shen G D. Kinetics of Growth of AlAs/AlGaAs Oxide in Cylindrical Mesa[J]. Chin. J. Semicond., 2005, 26(13): 281.

      Kinetics of Growth of AlAs/AlGaAs Oxide in Cylindrical Mesa

      • Received Date: 2015-08-19

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