Chin. J. Semicond. > 1985, Volume 6 > Issue 4 > 413-419
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外延GaAs平面Hall器件

郑一阳 , 张进昌 and 刘衍

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(4): 413-419
      郑一阳, 张进昌, 刘衍. 外延GaAs平面Hall器件[J]. 半导体学报(英文版), 1985, 6(4): 413-419.
      Citation:
      郑一阳, 张进昌, 刘衍. 外延GaAs平面Hall器件[J]. 半导体学报(英文版), 1985, 6(4): 413-419.
      shu

      • Received Date: 2015-08-20

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