Citation: |
Zhao Jian, Chen Yonghai, Wang Zhanguo, Xu Bo. Growth of InAs/GaAs Quantum Dots and Quantum Rings by Droplet Epitaxy Based on Patterned Substrate[J]. Journal of Semiconductors, 2008, 29(10): 2003-2008.
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Zhao J, Chen Y H, Wang Z G, Xu B. Growth of InAs/GaAs Quantum Dots and Quantum Rings by Droplet Epitaxy Based on Patterned Substrate[J]. J. Semicond., 2008, 29(10): 2003.
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Growth of InAs/GaAs Quantum Dots and Quantum Rings by Droplet Epitaxy Based on Patterned Substrate
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Abstract
Droplet epitaxy is a new MBE growth method for semiconductor materials,but there has been no effective research concerning the influence of patterned substrate on droplet epitaxy until now.The authors report different quantum dots and quantum rings grown on different types of μm-scale patterned substrates and analyze the influence of patterned substrate on droplet epitaxy,the formation mechanism of the quantum rings,and their distribution behavior. -
References
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