Chin. J. Semicond. > 1987, Volume 8 > Issue 4 > 429-432
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锗硅单晶扩散系数理论探讨及各晶向扩硼实验

陈忠景 , 陈为民 and 林政伟

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1987

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      Article Navigation >  Journal of Semiconductors  > 1987  >  8(4): 429-432
      陈忠景, 陈为民, 林政伟. 锗硅单晶扩散系数理论探讨及各晶向扩硼实验[J]. 半导体学报(英文版), 1987, 8(4): 429-432.
      Citation:
      陈忠景, 陈为民, 林政伟. 锗硅单晶扩散系数理论探讨及各晶向扩硼实验[J]. 半导体学报(英文版), 1987, 8(4): 429-432.
      shu

      • Received Date: 2015-08-19

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