Chin. J. Semicond. > 2000, Volume 21 > Issue 2 > 105-114

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A Quasi-Therm odynam ic Model of MOVPE of InGaN

陆大成 and 段树坤

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Key words: InGaN

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    Received: 20 August 2015 Revised: Online: Published: 01 February 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(2): 105-114
      陆大成, 段树坤. A Quasi-Therm odynam ic Model of MOVPE of InGaN[J]. 半导体学报(英文版), 2000, 21(2): 105-114.
      Citation:
      陆大成, 段树坤. A Quasi-Therm odynam ic Model of MOVPE of InGaN[J]. 半导体学报(英文版), 2000, 21(2): 105-114.
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      • Received Date: 2015-08-20

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