Effects of Heat Treatment on the Varistor Performance of ZnO Thin Films Deposited at Low Temperatures

Xia Jiaozhen; Lu Hui; Wang Pu; Xu Xiaofeng; Du Minggui

Chin. J. Semicond. > 2006, Volume 27 > Issue 10 > 1763-1766

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Effects of Heat Treatment on the Varistor Performance of ZnO Thin Films Deposited at Low Temperatures

Xia Jiaozhen, Lu Hui, Wang Pu, Xu Xiaofeng and Du Minggui

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Abstract: Single-layer and multilayer ZnO thin films are deposited by means of gas discharge active reaction evaporation through single and multiple depositions at relatively lower temperatures.AFM and XRD patterns show that these films possess multicrystal fabric that gives priority to (002),and the grain dimension of the multilayer ZnO film is increased.A multilayer ZnO film with a nonlinear coefficient of 61.54 and varistor voltage of 20.10V can be obtained at a 200℃ annealing temperature.The varistor voltage can be reduced significantly by increasing the annealing temperature within a certain range.The mechanism behind the effect of different layers and annealing temperature on varistor characteristics of ZnO thin films is also discussed.

Key words: ZnO thin film, low temperature, layer, heat treatment, varistor voltage, nonlinearity coefficient

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Xia Jiaozhen, Lu Hui, Wang Pu, Xu Xiaofeng, Du Minggui. Effects of Heat Treatment on the Varistor Performance of ZnO Thin Films Deposited at Low Temperatures[J]. Journal of Semiconductors, 2006, 27(10): 1763-1766.

Xia J Z, Lu H, Wang P, Xu X F, Du M G. Effects of Heat Treatment on the Varistor Performance of ZnO Thin Films Deposited at Low Temperatures[J]. Chin. J. Semicond., 2006, 27(10): 1763.

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Received: 18 August 2015 Revised: 29 April 2006 Online: Published: 01 October 2006

Single-layer and multilayer ZnO thin films are deposited by means of gas discharge active reaction evaporation through single and multiple depositions at relatively lower temperatures.AFM and XRD patterns show that these films possess multicrystal fabric that gives priority to (002),and the grain dimension of the multilayer ZnO film is increased.A multilayer ZnO film with a nonlinear coefficient of 61.54 and varistor voltage of 20.10V can be obtained at a 200℃ annealing temperature.The varistor voltage can be reduced significantly by increasing the annealing temperature within a certain range.The mechanism behind the effect of different layers and annealing temperature on varistor characteristics of ZnO thin films is also discussed.

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