Chin. J. Semicond. > 2001, Volume 22 > Issue 3 > 292-294
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硅片少子寿命的直排四探针测试

周全德

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Key words: 少子寿命, 直排四探针, 电阻率测试, 注入

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    Received: 20 August 2015 Revised: Online: Published: 01 March 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(3): 292-294
      周全德. 硅片少子寿命的直排四探针测试[J]. 半导体学报(英文版), 2001, 22(3): 292-294.
      Citation:
      周全德. 硅片少子寿命的直排四探针测试[J]. 半导体学报(英文版), 2001, 22(3): 292-294.
      shu

      • Received Date: 2015-08-20

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