Chin. J. Semicond. > 1985, Volume 6 > Issue 4 > 429-432
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InP上等离子增强化学汽相淀积SiO_2膜及其MIS结构C-V特性研究

江若琏 , 徐俊明 , 刘青淮 , 王凯 and 郑有炓

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(4): 429-432
      江若琏, 徐俊明, 刘青淮, 王凯, 郑有炓. InP上等离子增强化学汽相淀积SiO_2膜及其MIS结构C-V特性研究[J]. 半导体学报(英文版), 1985, 6(4): 429-432.
      Citation:
      江若琏, 徐俊明, 刘青淮, 王凯, 郑有炓. InP上等离子增强化学汽相淀积SiO_2膜及其MIS结构C-V特性研究[J]. 半导体学报(英文版), 1985, 6(4): 429-432.
      shu

      • Received Date: 2015-08-20

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