PAPERS
Wen Jimin, San Haisheng, Huang Hengpei, Xie Liang, Zhu Ninghua, Zhao Lingjuan and Wang Wei
Abstract: A novel optical heterodyne system with a distributed Bragg reflector (DBR) tunable laser is proposed,and an efficient calibration method is also put forward for removing errors caused by the fluctuations of optical power and the linewidth of the beat signal.Accurate frequency response of high-speed photodetectors can be obtained with this method.Results calibrated by our method agree well with data provided by the manufacturer,thereby demonstrating the accuracy and effectiveness of this method.Side-mode suppression ratios and dynamic behavior of wavelength transients, which probably affect the measurement of frequency response,are also investigated.
Key words: DBR tunable laser, optical heterodyne, frequency response, high-speed photodetector
| 1 |
Mengke Wang, Shangjian Zhang, Zhao Liu, Xuyan Zhang, Yutong He, et al. Journal of Semiconductors, 2021, 42(4): 042303. doi: 10.1088/1674-4926/42/4/042303 |
| 2 |
Strain effect on intersubband transitions in rolled-up quantum well infrared photodetectors Han Wang, Shilong Li, Honglou Zhen, Xiaofei Nie, Gaoshan Huang, et al. Journal of Semiconductors, 2017, 38(5): 054006. doi: 10.1088/1674-4926/38/5/054006 |
| 3 |
Photodetectors based on two dimensional materials Zheng Lou, Zhongzhu Liang, Guozhen Shen Journal of Semiconductors, 2016, 37(9): 091001. doi: 10.1088/1674-4926/37/9/091001 |
| 4 |
Said Benramache, Foued Chabane, Boubaker Benhaoua, Fatima Z. Lemmadi Journal of Semiconductors, 2013, 34(2): 023001. doi: 10.1088/1674-4926/34/2/023001 |
| 5 |
Parameters influencing the optical properties of SnS thin films Priyal Jain, P. Arun Journal of Semiconductors, 2013, 34(9): 093004. doi: 10.1088/1674-4926/34/9/093004 |
| 6 |
A simulation of doping and trap effects on the spectral response of AlGaN ultraviolet detectors Sidi Ould Saad Hamady Journal of Semiconductors, 2012, 33(3): 034002. doi: 10.1088/1674-4926/33/3/034002 |
| 7 |
N+P photodetector characterization using the quasi-steady state photoconductance decay method Omeime Xerviar Esebamen Journal of Semiconductors, 2012, 33(12): 123002. doi: 10.1088/1674-4926/33/12/123002 |
| 8 |
Facile fabrication of UV photodetectors based on ZnO nanorod networks across trenched electrodes Li Yingying, Cheng Chuanwei, Dong Xiang, Gao Junshan, Zhang Haiqian, et al. Journal of Semiconductors, 2009, 30(6): 063004. doi: 10.1088/1674-4926/30/6/063004 |
| 9 |
Optical properties in 1D photonic crystal structure using Si/C60 multilayers Chen Jing, Tang Jiyu, Han Peide, Chen Junfang Journal of Semiconductors, 2009, 30(4): 043001. doi: 10.1088/1674-4926/30/4/043001 |
| 10 |
Yu Changliang, Mao Luhong, Xiao Xindong, Xie Sheng, Zhang Shilin, et al. Journal of Semiconductors, 2009, 30(10): 105010. doi: 10.1088/1674-4926/30/10/105010 |
| 11 |
Self-Seeding of DFB Laser to Improve the Frequency Response Wang Xin, Wen Jimin, Huang Hengpei, Yuan Haiqing, 谢亮, et al. Chinese Journal of Semiconductors , 2007, 28(2): 254-257. |
| 12 |
Lei Shuangying, Shen Bo, Xu Fujun, Yang Zhijian, Xu Ke, et al. Chinese Journal of Semiconductors , 2006, 27(3): 403-408. |
| 13 |
9μm Cutoff 128×128 AlGaAs/GaAs Quantum Well Infrared Photodetector Focal Plane Arrays Li Xianjie, Liu Yingbin, Feng Zhen, Guo Fan, Zhao Yonglin, et al. Chinese Journal of Semiconductors , 2006, 27(8): 1355-1359. |
| 14 |
Transport Properties of Two Coupled Quantum Dots Under Optical Pumping Ge Chuannan, Wen Jun, Peng Ju, Wang Baigeng Chinese Journal of Semiconductors , 2006, 27(4): 598-603. |
| 15 |
Growth and Optical Properties of ZnO Films and Quantum Wells Zhang Baoping, Kang Junyong, Yu Jinzhong, Wang Qiming, Segawa Yusaburo, et al. Chinese Journal of Semiconductors , 2006, 27(4): 613-622. |
| 16 |
Improvement of the Frequency Response of a DFB Laser Using Injection Locking Zhang Tao, San Haisheng, Wen Jimin, Liu Yu, Liu Chao, et al. Chinese Journal of Semiconductors , 2006, 27(8): 1463-1466. |
| 17 |
A Low-Power High-Frequency CMOS Peak Detector Li Xuechu, Gao Qingyun, Qin Shicai Chinese Journal of Semiconductors , 2006, 27(10): 1707-1710. |
| 18 |
Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors Mao Rongwei, Zuo Yuhua, Li Chuanbo, Cheng Buwen, Teng Xuegong, et al. Chinese Journal of Semiconductors , 2005, 26(2): 271-275. |
| 19 |
Effect of DBR Geometry on Reflectivity and Spectral Linewidth of DBR Lasers Fang Dawei, Zhang Yi, Li Chenxia, Manzaneda C, Li Bo, et al. Chinese Journal of Semiconductors , 2005, 26(12): 2315-2319. |
| 20 |
Zhang Jing, Li Baoxia, Zhao Lingjuan, Wang Baojun, Zhou Fan, et al. Chinese Journal of Semiconductors , 2005, 26(11): 2053-2057. |
Article views: 3163 Times PDF downloads: 1927 Times Cited by: 0 Times
Received: 18 August 2015 Revised: 23 February 2006 Online: Published: 01 September 2006
| Citation: |
Wen Jimin, San Haisheng, Huang Hengpei, Xie Liang, Zhu Ninghua, Zhao Lingjuan, Wang Wei. Accurate Characterization for the Frequency Response of High-Speed Photodetectors[J]. Journal of Semiconductors, 2006, 27(9): 1630-1634.
****
Wen J M, San H S, Huang H P, Xie L, Zhu N H, Zhao L J, Wang W. Accurate Characterization for the Frequency Response of High-Speed Photodetectors[J]. Chin. J. Semicond., 2006, 27(9): 1630.
|
WeChat ID
Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2
DownLoad: