Ultra-Thin Ru/TaN Bi-Layer as Diffusion Barrier to Seedless Copper Interconnect

Tan Jingjing; Zhou Mi; Chen Tao; Xie Qi; Ru Guoping; Qu Xinping

Chin. J. Semicond. > 2006, Volume 27 > Issue S1 > 197-201

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Ultra-Thin Ru/TaN Bi-Layer as Diffusion Barrier to Seedless Copper Interconnect

Tan Jingjing, Zhou Mi, Chen Tao, Xie Qi, Ru Guoping and Qu Xinping

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Abstract: The property of Ru/TaN bi-layer as diffusion barrier to copper interconnect is investigated.Ru/TaN and Cu/Ru/TaN films are prepared by ion beam sputtering system without breaking the vacuum.Rapid thermal annealing is carried out in high purity N2 atmosphere.Sheet resistance measurement and X-ray diffraction show good thermal stability of the Ru/TaN bi-layer structure.Bias leakage current versus time measurement,which is very sensitive to mobile ions in the oxide,is also used to investigate the copper MOS structure.The direct copper electroplating on the Ru/TaN/Si structure is also carried out.The results show that the Ru/TaN bi-layer with good thermal stability and diffusion barrier property can be widely used in seedless copper interconnects.

Key words: ruthenium, tantalum nitride, copper interconnect, diffusion barrier

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Tan Jingjing, Zhou Mi, Chen Tao, Xie Qi, Ru Guoping, Qu Xinping. Ultra-Thin Ru/TaN Bi-Layer as Diffusion Barrier to Seedless Copper Interconnect[J]. Journal of Semiconductors, 2006, 27(S1): 197-201.

Tan J J, Zhou M, Chen T, Xie Q, Ru G P, Qu X P. Ultra-Thin Ru/TaN Bi-Layer as Diffusion Barrier to Seedless Copper Interconnect[J]. Chin. J. Semicond., 2006, 27(13): 197.

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Received: 20 August 2015 Revised: Online: Published: 01 December 2006

The property of Ru/TaN bi-layer as diffusion barrier to copper interconnect is investigated.Ru/TaN and Cu/Ru/TaN films are prepared by ion beam sputtering system without breaking the vacuum.Rapid thermal annealing is carried out in high purity N2 atmosphere.Sheet resistance measurement and X-ray diffraction show good thermal stability of the Ru/TaN bi-layer structure.Bias leakage current versus time measurement,which is very sensitive to mobile ions in the oxide,is also used to investigate the copper MOS structure.The direct copper electroplating on the Ru/TaN/Si structure is also carried out.The results show that the Ru/TaN bi-layer with good thermal stability and diffusion barrier property can be widely used in seedless copper interconnects.

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