Chin. J. Semicond. > 2004, Volume 25 > Issue 11 > 1500-1504
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ICP刻蚀参数对SOI脊形波导侧壁粗糙度的影响

樊中朝 , 余金中 , 陈少武 , 杨笛 , 严清峰 and 王良臣

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Key words: SOI, ICP, 粗糙度, 脊形光波导

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    Received: 19 August 2015 Revised: Online: Published: 01 November 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(11): 1500-1504
      樊中朝, 余金中, 陈少武, 杨笛, 严清峰, 王良臣. ICP刻蚀参数对SOI脊形波导侧壁粗糙度的影响[J]. 半导体学报(英文版), 2004, 25(11): 1500-1504.
      Citation:
      樊中朝, 余金中, 陈少武, 杨笛, 严清峰, 王良臣. ICP刻蚀参数对SOI脊形波导侧壁粗糙度的影响[J]. 半导体学报(英文版), 2004, 25(11): 1500-1504.
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      • Received Date: 2015-08-19

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