Chin. J. Semicond. > 1996, Volume 17 > Issue 11 > 863-868
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X射线衍射动力学理论研究As~＋注入Si

马德录，李晓舟，毛晓峰，高雅君

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    Received: 18 August 2015 Revised: Online: Published: 01 November 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(11): 863-868
      马德录，李晓舟，毛晓峰，高雅君. X射线衍射动力学理论研究As~＋注入Si[J]. 半导体学报(英文版), 1996, 17(11): 863-868.
      Citation:
      马德录，李晓舟，毛晓峰，高雅君. X射线衍射动力学理论研究As~＋注入Si[J]. 半导体学报(英文版), 1996, 17(11): 863-868.
      shu

      • Received Date: 2015-08-18

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