Chin. J. Semicond. > 1990, Volume 11 > Issue 11 > 849-854
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氧处理对氮氧化膜界面特性和组分的影响

李观启 , 黄美浅 and 刘百勇

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(11): 849-854
      李观启, 黄美浅, 刘百勇. 氧处理对氮氧化膜界面特性和组分的影响[J]. 半导体学报(英文版), 1990, 11(11): 849-854.
      Citation:
      李观启, 黄美浅, 刘百勇. 氧处理对氮氧化膜界面特性和组分的影响[J]. 半导体学报(英文版), 1990, 11(11): 849-854.
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      • Received Date: 2015-08-19

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