Chin. J. Semicond. > 2004, Volume 25 > Issue 8 > 972-975
|

CONTENTS

离子束淀积方法制备GdSi_2薄膜

李艳丽 , 陈诺夫 , 周剑平 , 宋书林 , 杨少延 and 刘志凯

+ Author Affiliations

PDF

Key words: 离子束淀积, X射线衍射, GdSi

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2107 Times PDF downloads: 1157 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 August 2004

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2004  >  25(8): 972-975
      李艳丽, 陈诺夫, 周剑平, 宋书林, 杨少延, 刘志凯. 离子束淀积方法制备GdSi_2薄膜[J]. 半导体学报(英文版), 2004, 25(8): 972-975.
      Citation:
      李艳丽, 陈诺夫, 周剑平, 宋书林, 杨少延, 刘志凯. 离子束淀积方法制备GdSi_2薄膜[J]. 半导体学报(英文版), 2004, 25(8): 972-975.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return