Chin. J. Semicond. > 1997, Volume 18 > Issue 1 > 32-35
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功率MOSFET反向特性的分析模拟

周宝霞 , 陈治明 and 王守觉

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    Received: 19 August 2015 Revised: Online: Published: 01 January 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(1): 32-35
      周宝霞, 陈治明, 王守觉. 功率MOSFET反向特性的分析模拟[J]. 半导体学报(英文版), 1997, 18(1): 32-35.
      Citation:
      周宝霞, 陈治明, 王守觉. 功率MOSFET反向特性的分析模拟[J]. 半导体学报(英文版), 1997, 18(1): 32-35.
      shu

      • Received Date: 2015-08-19

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