Chin. J. Semicond. > 1990, Volume 11 > Issue 6 > 441-447
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氮化硅和氮氧化硅在俄歇电子谱分析中的电子束和离子束辐照效应

陈维德 , H.Bender and H.E.Maes

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    Received: 19 August 2015 Revised: Online: Published: 01 June 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(6): 441-447
      陈维德, H.Bender, H.E.Maes. 氮化硅和氮氧化硅在俄歇电子谱分析中的电子束和离子束辐照效应[J]. 半导体学报(英文版), 1990, 11(6): 441-447.
      Citation:
      陈维德, H.Bender, H.E.Maes. 氮化硅和氮氧化硅在俄歇电子谱分析中的电子束和离子束辐照效应[J]. 半导体学报(英文版), 1990, 11(6): 441-447.
      shu

      • Received Date: 2015-08-19

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