Chin. J. Semicond. > 2002, Volume 23 > Issue 5 > 505-508
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高线性度外延及注入GaAs Hall器件

郑一阳

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Key words: Hall器件, 有源区及过渡区分布, 2 5T磁场下±0 04%的高磁线性度

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(5): 505-508
      郑一阳. 高线性度外延及注入GaAs Hall器件[J]. 半导体学报(英文版), 2002, 23(5): 505-508.
      Citation:
      郑一阳. 高线性度外延及注入GaAs Hall器件[J]. 半导体学报(英文版), 2002, 23(5): 505-508.
      shu

      • Received Date: 2015-08-19

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