Chin. J. Semicond. > 1991, Volume 12 > Issue 10 > 614-618
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氧离子和氮离子共注入硅形成SOI结构的俄歇能谱研究

俞跃辉 , 林成鲁 , 邹世昌 and 卢江

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    Received: 19 August 2015 Revised: Online: Published: 01 October 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(10): 614-618
      俞跃辉, 林成鲁, 邹世昌, 卢江. 氧离子和氮离子共注入硅形成SOI结构的俄歇能谱研究[J]. 半导体学报(英文版), 1991, 12(10): 614-618.
      Citation:
      俞跃辉, 林成鲁, 邹世昌, 卢江. 氧离子和氮离子共注入硅形成SOI结构的俄歇能谱研究[J]. 半导体学报(英文版), 1991, 12(10): 614-618.
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      • Received Date: 2015-08-19

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