Chin. J. Semicond. > 2000, Volume 21 > Issue 9 > 934-936

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MBE生长的高质量AlGaAs/InGaAs双δ掺杂PHEMT结构的材料

曹昕 , 曾一平 , 孔梅影 , 王保强 , 潘量 , 张昉昉 and 朱战萍

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Key words: PHEMT, MBE, AlGaAs/InGaAs

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    Received: 20 August 2015 Revised: Online: Published: 01 September 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(9): 934-936
      曹昕, 曾一平, 孔梅影, 王保强, 潘量, 张昉昉, 朱战萍. MBE生长的高质量AlGaAs/InGaAs双δ掺杂PHEMT结构的材料[J]. 半导体学报(英文版), 2000, 21(9): 934-936.
      Citation:
      曹昕, 曾一平, 孔梅影, 王保强, 潘量, 张昉昉, 朱战萍. MBE生长的高质量AlGaAs/InGaAs双δ掺杂PHEMT结构的材料[J]. 半导体学报(英文版), 2000, 21(9): 934-936.
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      • Received Date: 2015-08-20

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