Chin. J. Semicond. > 1991, Volume 12 > Issue 10 > 619-624
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用XPS研究快速热退火形成TiSi_2的热氧化

陈存礼 , 李建年 and 华文玉

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    Received: 19 August 2015 Revised: Online: Published: 01 October 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(10): 619-624
      陈存礼, 李建年, 华文玉. 用XPS研究快速热退火形成TiSi_2的热氧化[J]. 半导体学报(英文版), 1991, 12(10): 619-624.
      Citation:
      陈存礼, 李建年, 华文玉. 用XPS研究快速热退火形成TiSi_2的热氧化[J]. 半导体学报(英文版), 1991, 12(10): 619-624.
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      • Received Date: 2015-08-19

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