Effect of Surface-Covered Annealing on the Optical Properties of ZnO Films Grown by MOCVD

Wang Li; Pu Yong; Fang Wenqing; Mo Chunlan; Xiong Chuanbing; Jiang Fengyi

Chin. J. Semicond. > 2003, Volume 24 > Issue 3 > 409-412

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Effect of Surface-Covered Annealing on the Optical Properties of ZnO Films Grown by MOCVD

Wang Li, Pu Yong, Fang Wenqing, Mo Chunlan, Xiong Chuanbing and Jiang Fengyi

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Abstract: ZnO films grown by metal organic chemical vapor deposition at atmospheric pressure are annealed at 850℃,with the film surfaces exposed to air or covered by a sapphire wafer.The optical properties of the as-grown and the annealed samples are studied by photoluminescence (PL) spectroscopy.It is found that the air-exposure annealing effectively removes the hydrogen impurities from the ZnO films but greatly increases the deep-level emission.In the surface-covered annealed sample,an elimination of the hydrogen impurities is also observed,and the deep-level emission disappears completely.The free exciton emission is significantly enhanced in the ZnO film after surface-covered annealing.

Key words: zinc oxide, annealing, optical properties, exciton

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Wang Li, Pu Yong, Fang Wenqing, Mo Chunlan, Xiong Chuanbing, Jiang Fengyi. Effect of Surface-Covered Annealing on the Optical Properties of ZnO Films Grown by MOCVD[J]. Journal of Semiconductors, 2003, 24(3): 409-412.

Wang L, Pu Y, Fang W Q, Mo C L, Xiong C B, Jiang F Y. Effect of Surface-Covered Annealing on the Optical Properties of ZnO Films Grown by MOCVD[J]. Chin. J. Semicond., 2003, 24(3): 409.

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Received: 20 August 2015 Revised: Online: Published: 01 March 2003

ZnO films grown by metal organic chemical vapor deposition at atmospheric pressure are annealed at 850℃,with the film surfaces exposed to air or covered by a sapphire wafer.The optical properties of the as-grown and the annealed samples are studied by photoluminescence (PL) spectroscopy.It is found that the air-exposure annealing effectively removes the hydrogen impurities from the ZnO films but greatly increases the deep-level emission.In the surface-covered annealed sample,an elimination of the hydrogen impurities is also observed,and the deep-level emission disappears completely.The free exciton emission is significantly enhanced in the ZnO film after surface-covered annealing.

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