Chin. J. Semicond. > 2000, Volume 21 > Issue 6 > 576-579
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a-SiO_x∶H/a-SiO_y∶H多层薄膜微结构的退火行为

郭震宁 , 黄永箴 , 郭亨群 , 李世忱 and 王启明

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Key words: 退火, 微结构, 多层薄膜

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(6): 576-579
      郭震宁, 黄永箴, 郭亨群, 李世忱, 王启明. a-SiO_x∶H/a-SiO_y∶H多层薄膜微结构的退火行为[J]. 半导体学报(英文版), 2000, 21(6): 576-579.
      Citation:
      郭震宁, 黄永箴, 郭亨群, 李世忱, 王启明. a-SiO_x∶H/a-SiO_y∶H多层薄膜微结构的退火行为[J]. 半导体学报(英文版), 2000, 21(6): 576-579.
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      • Received Date: 2015-08-20

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