Chin. J. Semicond. > 1984, Volume 5 > Issue 1 > 66-73
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InP、InGaAsP质子轰击区的光学特性及质子轰击条件对InGaAsP/InP DH激光器特性的影响

朱龙德 , 王莉 and 胡雄伟

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1984

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      Article Navigation >  Journal of Semiconductors  > 1984  >  5(1): 66-73
      朱龙德, 王莉, 胡雄伟. InP、InGaAsP质子轰击区的光学特性及质子轰击条件对InGaAsP/InP DH激光器特性的影响[J]. 半导体学报(英文版), 1984, 5(1): 66-73.
      Citation:
      朱龙德, 王莉, 胡雄伟. InP、InGaAsP质子轰击区的光学特性及质子轰击条件对InGaAsP/InP DH激光器特性的影响[J]. 半导体学报(英文版), 1984, 5(1): 66-73.
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      • Received Date: 2015-08-20

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