Chin. J. Semicond. > 1989, Volume 10 > Issue 2 > 86-92
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MBE[(AI_xGa_(1-x)As)_l(GaAs)_m_n/GaAs(001)超晶格结构参数的X射线双晶衍射测量研究

姜力 , 吴苍生 , 王玉田 and 高维宾

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    姜力, 吴苍生, 王玉田, 高维宾. MBE[(AI_xGa_(1-x)As)_l(GaAs)_m_n/GaAs(001)超晶格结构参数的X射线双晶衍射测量研究[J]. 半导体学报(英文版), 1989, 10(2): 86-92.
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    Received: 19 August 2015 Revised: Online: Published: 01 February 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(2): 86-92
      姜力, 吴苍生, 王玉田, 高维宾. MBE[(AI_xGa_(1-x)As)_l(GaAs)_m_n/GaAs(001)超晶格结构参数的X射线双晶衍射测量研究[J]. 半导体学报(英文版), 1989, 10(2): 86-92.
      Citation:
      姜力, 吴苍生, 王玉田, 高维宾. MBE[(AI_xGa_(1-x)As)_l(GaAs)_m_n/GaAs(001)超晶格结构参数的X射线双晶衍射测量研究[J]. 半导体学报(英文版), 1989, 10(2): 86-92.
      shu

      • Received Date: 2015-08-19

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