Chin. J. Semicond. > 1992, Volume 13 > Issue 5 > 302-308
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快速退火Co/Si固相反应及CoSi_2薄膜特性研究

刘平 , 李炳宗 , 姜国宝 , 黄维宁 , 沈孝良 , R.Aitken and K.Daneshvar

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    Received: 19 August 2015 Revised: Online: Published: 01 May 1992

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      Article Navigation >  Journal of Semiconductors  > 1992  >  13(5): 302-308
      刘平, 李炳宗, 姜国宝, 黄维宁, 沈孝良, R.Aitken, K.Daneshvar. 快速退火Co/Si固相反应及CoSi_2薄膜特性研究[J]. 半导体学报(英文版), 1992, 13(5): 302-308.
      Citation:
      刘平, 李炳宗, 姜国宝, 黄维宁, 沈孝良, R.Aitken, K.Daneshvar. 快速退火Co/Si固相反应及CoSi_2薄膜特性研究[J]. 半导体学报(英文版), 1992, 13(5): 302-308.
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      • Received Date: 2015-08-19

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