Chin. J. Semicond. > 1985, Volume 6 > Issue 2 > 159-165
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用冷阴极电子束快速处理金属-硅薄膜生成硅化物

杜元成 , 鲁钟 , 郁曾期 , 孙迭篪 , 李富铭 and G.J.Collions

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    Received: 20 August 2015 Revised: Online: Published: 01 February 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(2): 159-165
      杜元成, 鲁钟, 郁曾期, 孙迭篪, 李富铭, G.J.Collions. 用冷阴极电子束快速处理金属-硅薄膜生成硅化物[J]. 半导体学报(英文版), 1985, 6(2): 159-165.
      Citation:
      杜元成, 鲁钟, 郁曾期, 孙迭篪, 李富铭, G.J.Collions. 用冷阴极电子束快速处理金属-硅薄膜生成硅化物[J]. 半导体学报(英文版), 1985, 6(2): 159-165.
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      • Received Date: 2015-08-20

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